Datasheet > KSR2014D26Z

KSR2014D26Z

更新时间： 2024-11-26 08:08:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	26K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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KSR2014D26Z 数据手册

KSR2014

Switching Application (Bias Resistor Built In)

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R =4.7KΩ, R =47KΩ)

Complement to KSR1014

TO-92

1. Emitter 2. Collector 3. Base

Equivalent Circuit

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-50

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-50

CEO

EBO

-10

-100

300

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-50

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

I = -10µA, I =0

CBO

CEO

I = -100µA, I =0

-50

= -40V, I =0

-0.1

-0.3

µA

CBO

DC Current Gain

= -5V, I = -5mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -10mA, I = -0.5mA

= -10V, I = -5mA

200

5.5

MHz

= -10V, I =0

f=1.0MHz

V (off)

Input Off Voltage

Input On Voltage

Input Resistor

= -5V, I = -100µA

-0.5

V (on)

= -0.2V, I = -5mA

-1.3

6.2

3.2

4.7

0.1

KΩ

R /R

Resistor Ratio

0.09

0.11

Rev. A2, July 2001

12 3

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