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KSR2011D26Z PDF预览

KSR2011D26Z

更新时间: 2024-11-09 06:59:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
3页 24K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSR2011D26Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz

KSR2011D26Z 数据手册

 浏览型号KSR2011D26Z的Datasheet PDF文件第2页浏览型号KSR2011D26Z的Datasheet PDF文件第3页 
KSR2011  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=22K)  
Complement to KSR1011  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Equivalent Circuit  
C
R
B
PNP Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-40  
V
CEO  
EBO  
-5  
V
I
-100  
300  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I = -1mA, I =0  
-40  
E
B
I
V
= -30V, I =0  
-0.1  
600  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -1mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
= -10V, I = -5mA  
200  
22  
MHz  
T
CE  
C
R
15  
29  
KΩ  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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