生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSR2011D27Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSR2011D74Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSR2011D75Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSR2011J05Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
KSR2012 | SAMSUNG |
获取价格 |
PNP (SWITCHING APPLICATION) | |
KSR2012BU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSR2012TA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
KSR2013 | SAMSUNG |
获取价格 |
PNP (SWITCHING APPLICATION) | |
KSR2013BU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
KSR2013TA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |