KSQ15A06

更新时间： 2024-11-03 23:15:15

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	51K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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KSQ15A06 数据手册

SBD T y p e : KSQ15A06

OULINE DRAWING

FEATURES

* Similar to TO-247AC(TO-3P)Case

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Current Capability

* 40 Volts thru 60 Volts Types Available

Maximum Ratings

Approx Net Weight: 5.5g

KSQ15A06

Rating

Symbol

V_RRM

Unit

Repetitive Peak Reverse Voltage

50 Hz half Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

I_F(RMS)

I_FSM

15 Tc=114°C

23.5

50Hz Half Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

200

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance Junction to Case

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 15 A

0.65

2.0 °C /W

Rth(j-c) Junction to Case

12 3 4 5 6

中文翻译

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与KSQ15A06相关器件

型号	品牌	获取价格	描述	数据表
KSQ15A06B	NIEC	获取价格	Schottky Barrier Diode
KSQ30A03A03LB	NIEC	获取价格	Rectifier Diode,
KSQ30A03LB	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 30V V(RRM), Silicon
KSQ30A04	NIEC	获取价格	Schottky Barrier Diode
KSQ30A04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KSQ30A04B	NIEC	获取价格	Schottky Barrier Diode
KSQ30A06	NIEC	获取价格	Schottky Barrier Diode
KSQ30A06	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KSQ30A06B	NIEC	获取价格	Schottky Barrier Diode
KSQ60A03LB	NIEC	获取价格	Low Forward Voltage Drop Low Power Loss, High Efficiency, High Surge Current Capability