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KSP05J18Z PDF预览

KSP05J18Z

更新时间: 2024-02-10 05:36:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 32K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSP05J18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.77
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSP05J18Z 数据手册

 浏览型号KSP05J18Z的Datasheet PDF文件第2页浏览型号KSP05J18Z的Datasheet PDF文件第3页浏览型号KSP05J18Z的Datasheet PDF文件第4页 
KSP05/06  
Amplifier Transistor  
Collector-Emitter Voltage: V  
= KSP05: 60V  
KSP06: 80V  
CEO  
Collector Dissipation: P (max)=625mW  
Complement to KSP55/56  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector Base Voltage  
Collector-Emitter Voltage  
60  
80  
V
V
CBO  
: KSP05  
: KSP06  
60  
80  
V
V
CEO  
EBO  
: KSP05  
: KSP06  
Emitter-Base Voltage  
Collector Current  
4
500  
V
I
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
625  
C
T
T
150  
J
-55~150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =1mA, I =0  
CEO  
C
B
: KSP05  
: KSP06  
60  
80  
V
V
BV  
Emitter-Base Breakdown Voltage  
I =100µA, I =0  
4
V
EBO  
E
C
I
Collector Cut-off Current  
: KSP05  
CBO  
V
V
=60V, I =0  
0.1  
0.1  
µA  
µA  
CB  
CB  
E
: KSP06  
=80V, I =0  
E
I
Collector Cut-off Current  
DC Current Gain  
V
=60V, I =0  
0.1  
µA  
CEO  
CE  
B
h
V
V
=1V, I =10mA  
50  
50  
FE  
CE  
CE  
C
=1V, I =100mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =100mA, I =10mA  
0.25  
1.2  
V
V
CE  
C
B
V
=1V, I =100mA  
C
BE  
CE  
f
Current Gain Bandwidth Product  
V
=2V, I =10mA  
100  
MHz  
T
CE  
C
f=100MHz  
* Pulse Test: PW300µs, Duty Cycle2%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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