Datasheet > KSD560YTU

KSD560YTU

更新时间： 2024-11-06 11:11:43

品牌	Logo	应用领域
安森美 - ONSEMI		局域网放大器晶体管达林顿晶体管
页数	文件大小	规格书
6页	161K
描述
NPN外延硅达林顿晶体管

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技术参数
数据手册
替代型号

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KSD560YTU 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	TO-220, 3 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	1.56
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	100 V
配置：	DARLINGTON WITH BUILT-IN DIODE	最小直流电流增益 (hFE)：	5000
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	30 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

KSD560YTU 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

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KSD560YTU 替代型号

型号	品牌	替代类型	描述	数据表
KSD560YTU	FAIRCHILD	类似代替	NPN Epitaxial Silicon Darlington Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
KSD560Y	FAIRCHILD	功能相似	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与KSD560YTU相关器件

型号	品牌	获取价格	描述	数据表
KSD568	FAIRCHILD	获取价格	Low Frequency Power Amplifier
KSD568O	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568-O	SAMSUNG	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568OJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568OTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568RTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568Y	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568-Y	SAMSUNG	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD568YJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
KSD569	FAIRCHILD	获取价格	Low Frequency Power Amplifier

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