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KSD227YTA PDF预览

KSD227YTA

更新时间: 2024-11-12 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率放大器
页数 文件大小 规格书
4页 41K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

KSD227YTA 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.78
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

KSD227YTA 数据手册

 浏览型号KSD227YTA的Datasheet PDF文件第2页浏览型号KSD227YTA的Datasheet PDF文件第3页浏览型号KSD227YTA的Datasheet PDF文件第4页 
KSD227  
Low Frequency Power Amplifier  
Complement to KSA642  
Collector Power Dissipation : P =400mW  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
25  
V
CEO  
EBO  
5
V
I
300  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
400  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
30  
25  
5
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=25V, I =0  
0.1  
0.1  
400  
0.4  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
=3V, I =0  
C
h
DC Current Gain  
=1V, I =50mA  
70  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I =300mA, I =30mA  
0.14  
V
CE  
C
B
h
Classification  
FE  
Classification  
O
Y
G
h
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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