Datasheet > KSD261_04

KSD261_04

更新时间： 2024-11-12 03:48:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	40K
描述
NPN Epitaxial Silicon Transistor

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中文翻译

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KSD261_04 数据手册

KSD261

Low Frequency Power Amplifier

•

Complement to KSA643

Collector Power Dissipation : P =500mW

Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

500

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

500

150

-55 ~ 150

°C

STG

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =100µA, I =0

CBO

CEO

EBO

I =10mA, I =0

C B

I =100µA, I =0

=25V, I =0

0.1

400

0.4

µA

CBO

EBO

Emitter Cut-off Current

=3V, I =0

DC Current Gain

=1V, I =0.1A

120

(sat)

Collector-Emitter Saturation Voltage

I =0.5A, I =50mA

0.18

Classification

120 ~ 240

200 ~ 400

Rev. B2, April 2004

12 3 4

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