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KSB546Y PDF预览

KSB546Y

更新时间: 2024-10-29 13:02:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管电视放大器局域网
页数 文件大小 规格书
4页 63K
描述
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSB546Y 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37Base Number Matches:1

KSB546Y 数据手册

 浏览型号KSB546Y的Datasheet PDF文件第2页浏览型号KSB546Y的Datasheet PDF文件第3页浏览型号KSB546Y的Datasheet PDF文件第4页 
KSB546  
TV Vertical Deflectio n Output  
Collector-Base Voltage : V  
= -200V  
CBO  
Collector Current : l = -2A  
C
Collector Dissipation : P = 25W (T =25°C)  
C
C
Complement to KSD401  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 200  
- 150  
- 5  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)Y  
V
CEO  
EBO  
V
I
- 2  
A
C
P
Collector Dissipation (T =25°C)  
25  
W
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
- 200  
- 150  
- 5  
Typ.  
Max. Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
= - 500µA, I = 0  
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= - 10mA, I = 0  
B
I = - 500uA, I = 0  
E
C
I
V
= - 150V, I = 0  
- 50  
240  
- 1  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= - 10V, I = - 0.4A  
40  
FE  
E
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= - 500mA, I = - 50mA  
V
CE  
C
B
f
V
= - 10V, I = - 0.4A  
5
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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