Datasheet > KSB564A

KSB564A

更新时间： 2024-10-29 12:55:39

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
1页	126K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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KSB564A 数据手册

RoHS

KSB564A

KSB564A TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

1. EMITTER

2. BASE

P_CM:

0.8 W (Tamb=25℃)

Collector current

I_CM:

3. COLLECTOR

-1

Collector-base voltage

1 2 3

V_(BR)CBO

-30

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= -100µA, I_E=0

I_C=-10 mA, I_B=0

I_E=-100µA, I_C=0

V_CB=-30V, I_E=0

MIN

-30

-25

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-0.1

400

-0.5

-1.2

µA

DC current gain

h_FE

V_CE=-1V, I_C= -0.1A

I_C= -1A, I_B= -0.1A

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CEsat

V_BEsat

Transition frequency

Output capacitance

_CE=-6V, I_C= -10mA

MHz

f _T

V_CE=-6V, I_E=0, f=1 MHz

C_ob

WEJ ELECTRONIC CO.,LTD

CLASSIFICATION OF h_FE

Rank

Range

70-140

120-240

200-400

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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