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KSA954YD27Z PDF预览

KSA954YD27Z

更新时间: 2024-10-28 19:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 50K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA954YD27Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):135
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

KSA954YD27Z 数据手册

 浏览型号KSA954YD27Z的Datasheet PDF文件第2页浏览型号KSA954YD27Z的Datasheet PDF文件第3页浏览型号KSA954YD27Z的Datasheet PDF文件第4页浏览型号KSA954YD27Z的Datasheet PDF文件第5页 
KSA954  
Audio Frequency Amplifier  
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-80  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
* Collector Current (Pulse)  
Collector Dissipation  
CBO  
-80  
V
CEO  
EBO  
-5  
V
I
I
-300  
-500  
600  
mA  
mA  
mW  
°C  
C
CP  
P
C
T
T
Junction Temperature  
150  
J
Storage Temperature  
-55 ~ 150  
°C  
STG  
* PW10ms, Duty Cycle50% Pulsed  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-100  
-100  
400  
Units  
I
I
V
V
= -80V, I =0  
nA  
nA  
CBO  
EBO  
CB  
BE  
E
= -5V, I =0  
C
h
h
V
V
= -1V, I = -50mA  
90  
30  
200  
80  
FE1  
FE2  
CE  
CE  
C
= -2V, I = -300mA  
C
V
V
V
(on)  
(sat)  
(sat)  
* Base Emitter On Voltage  
V
= -6V, I = -10mA  
-600  
-660  
-0.85  
-0.15  
13  
-700  
-1.2  
-0.6  
25  
mV  
V
BE  
BE  
CE  
CE  
C
* Base Emitter Saturation Voltage  
Collector -Emitter Saturation Voltage  
Output Capacitance  
I = -300mA, I = -30mA  
C B  
I = -300mA, I = -30mA  
V
C
B
C
V
= -6V, I =0, f=1MHz  
pF  
MHz  
ob  
CB  
CE  
E
f
Current Gain-Bandwidth Product  
V
= -6V, I = -10mA  
50  
100  
T
C
* Pulse Test: PW350µs, Duty Cycle2%  
h
Classification  
FE1  
Classification  
O
Y
G
h
90 ~ 180  
135 ~ 270  
200 ~ 400  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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