5秒后页面跳转
KSA992ED75Z PDF预览

KSA992ED75Z

更新时间: 2024-10-28 18:56:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 43K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA992ED75Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.74
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):400JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

KSA992ED75Z 数据手册

 浏览型号KSA992ED75Z的Datasheet PDF文件第2页浏览型号KSA992ED75Z的Datasheet PDF文件第3页浏览型号KSA992ED75Z的Datasheet PDF文件第4页浏览型号KSA992ED75Z的Datasheet PDF文件第5页 
KSA992  
Audio Frequency Low Noise Amplifier  
Complement to KSC1845  
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-120  
-120  
-5  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
V
CEO  
EBO  
V
I
I
-50  
mA  
mA  
mW  
°C  
C
Base Current  
-10  
B
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
500  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Collector Cur-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-50  
-1  
Units  
I
I
I
V
V
V
= -120V, I =0  
nA  
µA  
nA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
E
= -100V, I =0  
B
= -5mA, I =0  
-50  
C
h
h
V
V
= -6V, I = -0.1mA  
150  
200  
500  
500  
FE1  
FE2  
CE  
CE  
C
= -6V, I = -1mA  
800  
-0.65  
-0.3  
C
V
V
(on)  
Base-Emitter On Voltage  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
= -6V, I = -1mA  
-0.55  
-0.61  
-0.09  
100  
2
V
V
BE  
CE  
C
(sat)  
I = -10mA, I = -1mA  
C B  
CE  
f
V
= -6V, I = -1mA  
50  
MHz  
pF  
T
CE  
CB  
C
C
V
= -30V, I =0, f=1MHz  
3
ob  
E
NV  
Noise Voltage  
25  
40  
mV  
h
Classification  
FE2  
Classification  
P
F
E
h
200 ~ 400  
300 ~ 600  
400 ~ 800  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与KSA992ED75Z相关器件

型号 品牌 获取价格 描述 数据表
KSA992FATA FAIRCHILD

获取价格

暂无描述
KSA992FATA ONSEMI

获取价格

PNP外延硅晶体管
KSA992FBTA ONSEMI

获取价格

PNP外延硅晶体管
KSA992FBU FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor, 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURA
KSA992FBU ONSEMI

获取价格

PNP外延硅晶体管
KSA992FD27Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA992FTA FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/A
KSA992FTA ONSEMI

获取价格

PNP外延硅晶体管
KSA992J18Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSA992P FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92