是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.92 |
控制类型: | COMMON CONTROL | 计数方向: | BIDIRECTIONAL |
JESD-30 代码: | R-PDIP-T24 | JESD-609代码: | e0 |
最大I(ol): | 0.024 A | 湿度敏感等级: | 3 |
位数: | 8 | 功能数量: | 1 |
端子数量: | 24 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 输出特性: | 3-STATE |
输出极性: | INVERTED | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP24,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 电源: | 5 V |
Prop。Delay @ Nom-Sup: | 40 ns | 认证状态: | Not Qualified |
子类别: | Bus Driver/Transceivers | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
翻译: | N/A | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KS74HCTLS665N | SAMSUNG |
获取价格 |
Bus Driver/Transceiver, 1-Func, 8-Bit, True Output, CMOS, PDIP24 | |
KS74HCTLS86J | SAMSUNG |
获取价格 |
XOR Gate, CMOS, CDIP14 | |
KS74HCTLS86N | SAMSUNG |
获取价格 |
XOR Gate, CMOS, PDIP14 | |
KS7523 | MICROSEMI |
获取价格 |
Pin Diode, 75V V(BR), Silicon, | |
KS7524 | MICROSEMI |
获取价格 |
Pin Diode, 75V V(BR), Silicon, | |
KS7719NZ | SAMSUNG |
获取价格 |
Power Supply Support Circuit, Fixed, 1 Channel, +1.9VV, CMOS, PBCY3 | |
KS7720CZ | SAMSUNG |
获取价格 |
Power Supply Support Circuit, Fixed, 1 Channel, +2VV, CMOS, PBCY3 | |
KS7721NZ | SAMSUNG |
获取价格 |
Power Supply Support Circuit, Fixed, 1 Channel, +2.1VV, CMOS, PBCY3 | |
KS7723CZ | SAMSUNG |
获取价格 |
Power Supply Support Circuit, Fixed, 1 Channel, +2.3VV, CMOS, PBCY3 | |
KS7724NZ | SAMSUNG |
获取价格 |
Power Supply Support Circuit, Fixed, 1 Channel, +2.4VV, CMOS, PBCY3 |