Datasheet > KS800A500-1800V Y40KSE

KS800A500-1800V Y40KSE

更新时间： 2024-11-15 07:08:07

品牌	Logo	应用领域
柳晶 - LIUJING		可控硅
页数	文件大小	规格书
2页	362K
描述
可控硅、晶闸管

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中文翻译

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数据手册

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KS800A500-1800V Y40KSE 数据手册

KS800A500~1800V

Y40KSE

国标型双向晶闸管平板式

(

)

Chinese Type Triac Thyristors (Capsule Version)

Liujing rectifier co., Ltd.

FEATURES

1). Two anti-paralled thyristors on one Si-wafer

2). Hermetic metal cases with ceramic insulators

3). Capsule packages for doubble sided cooling

TYPICAL APPLICATIONS

I_T(RMS)

V_DRM/V_RRM

I_TSM

1220A

1). High power industrical and

power transmissior

500~1800V

8.8 KA

387 A²s*10³

2). DC and AC motor control

3). AC controllers

I²t

THE MAIN PARAMETERS

VALUE

℃

SYMBOL

I_T(RMS)

CHARACTERISTIC

RMS current

TEST CONDITIONS

T_j(

)

UNIT

Min Type Max

50Hz sine wave

Double side cooled, T_hs=55

125

1220

℃

50Hz sine wave

Double side cooled, T_hs=89

I_T(RMS)

RMS current

800

V_DRM

I_DRM

I_TSM

I²t

Repetitive peak reverse voltage

Repetitive peak current

Surge on-state current

125

500

1800

V_DRMtp=10ms, V_DSM= V_DRM+100V

V_RM= V_RRM

8.8

A²s*10³

125

10ms half sine wave, V_R=0.6V_RRM

I²T for fusing coordination

387

0.78

0.89

1.85

V_TO

r_T

Threshold voltage

On-state slop resistance

Peak on-state voltage

V_TM

dv/dt

125

I_TM=1200A, F=18KN

V_DM=0.67V_DRM

Critical rate of rise of off-state voltage

V_DM= 67%V_DRMto 1000A, Gate pulse

di/dt

Critical rate of rise of on-state current

125

t_r≤0.5 s I_GM=1.5A Repetitive

I_GT

V_GT

I_H

Gate trigger current

Gate trigger voltage

Holding current

0.8

350

3.5

，

V_A=12V I_A=1A

400

Thermal resistance

Junction to heatsink

double side cooled

Clamping force 18KN

℃

R_th(j-h)

0.032

F_m

Mounting force

Stored temperature

Weight

℃

stg

-40

140

W_t

360

Size

Package box size

95 95 50

www.china-liujing.com

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