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KRC120 PDF预览

KRC120

更新时间: 2024-11-12 11:31:31
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
7页 407K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

KRC120 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:unknown风险等级:5.77
Base Number Matches:1

KRC120 数据手册

 浏览型号KRC120的Datasheet PDF文件第2页浏览型号KRC120的Datasheet PDF文件第3页浏览型号KRC120的Datasheet PDF文件第4页浏览型号KRC120的Datasheet PDF文件第5页浏览型号KRC120的Datasheet PDF文件第6页浏览型号KRC120的Datasheet PDF文件第7页 
SEMICONDUCTOR  
KRC116~KRC122  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
B
C
FEATURES  
· With Built-in Bias Resistors.  
· Simplify Circuit Design.  
· Reduce a Quantity of Parts and Manufacturing Process.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
F
1.27  
G
H
J
0.85  
0.45  
_
14.00 +0.50  
H
K
L
0.55 MAX  
2.30  
F
F
EQUIVALENT CIRCUIT  
BIAS RESISTOR VALUES  
M
0.45 MAX  
1.00  
N
TYPE NO.  
KRC116  
KRC117  
KRC118  
KRC119  
KRC120  
KRC121  
KRC122  
R1(k) R2(k)  
3
1
2
OUT  
1. EMITTER  
2. COLLECTOR  
3. BASE  
1
10  
2.2  
10  
2.2  
2.2  
4.7  
10  
R1  
IN  
R2  
TO-92  
10  
4.7  
10  
COMMON  
47  
100  
100  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
KRC116122  
KRC116  
KRC117  
KRC118  
KRC119  
KRC120  
KRC121  
KRC122  
10, -5  
12, -10  
12, -5  
20, -7  
30, -10  
40, -15  
40, -10  
100  
VI  
Input Voltage  
V
IO  
PD  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
625  
KRC116122  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
2011. 6. 14  
Revision No : 1  
1/7  

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