Datasheet > KRC163F

KRC163F

更新时间： 2024-11-07 01:09:43

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描述
SEMICONDUCTOR

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中文翻译

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数据手册

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KRC163F 数据手册

SEMICONDUCTOR

KRC160F~KRC164F

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

· With Built-in Bias Resistors.

· Simplify Circuit Design.

· Reduce a Quantity of Parts and Manufacturing Process.

· Thin fine Pitch Small Package.

EQUIVALENT CIRCUIT

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL RATING

UNIT

V_CBO

V_CEO

V_EBO

I_C

CHARACTERISTIC

Collector Power Dissipation

Junction Temperature

SYMBOL RATING

UNIT

℃

P_C

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

100

UNIT

I_CBO

I_EBO

h_FE

V_CB=20V, I_E=0

V_EB=5V, I_C=0

Emitter Cut-off Current

V_CE=5V, I_C=1mA

I_C=5mA, I_B=0.25mA

V_CB=10V, I_E=0, f=1MHz

DC Current Gain

300

V_CE(sat)

C_ob

Collector-Emitter Saturation Voltage

Collector Output Capacitance

0.15

1.2

4.7

KRC160F

3.29

6.11

KRC161F

KRC163F

KRC164F

R₁

Input Resistor

kΩ

15.4

32.9

28.6

61.1

MARK SPEC

TYPE

KRC160F

KRC161F

KRC163F

KRC164F

MARK

2008. 11. 20

Revision No :3

1/4

12 3 4

中文翻译

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