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KRA101S_03 PDF预览

KRA101S_03

更新时间: 2024-11-16 11:31:27
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
6页 112K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA101S_03 数据手册

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SEMICONDUCTOR  
KRA101S~KRA106S  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
E
L
B
L
FEATURES  
DIM MILLIMETERS  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
Reduce a Quantity of Parts and Manufacturing Process.  
1
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
EQUIVALENT CIRCUIT  
BIAS RESISTOR VALUES  
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
TYPE NO.  
KRA101S  
KRA102S  
KRA103S  
KRA104S  
KRA105S  
KRA106S  
R1(k  
4.7  
10  
)
R2(k  
4.7  
10  
)
OUT  
M
R1  
1. COMMON (EMITTER)  
2. IN (BASE)  
IN  
22  
22  
R2  
3. OUT (COLLECTOR)  
47  
47  
2.2  
4.7  
47  
COMMON(+)  
47  
SOT-23  
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA101S 106S  
KRA101S  
-20, 10  
-30, 10  
-40, 10  
-40, 10  
-12, 5  
-20, 5  
-100  
KRA102S  
KRA103S  
VI  
Input Voltage  
V
KRA104S  
KRA105S  
KRA106S  
IO  
PD  
Tj  
Output Current  
mA  
Power Dissipation  
200  
mW  
KRA101S 106S  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55 150  
Marking  
MARK SPEC  
Lot No.  
TYPE  
KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S  
PA PB PC PD PE PF  
MARK  
Type Name  
2003. 11. 4  
Revision No : 3  
1/6  

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