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KRA107_11 PDF预览

KRA107_11

更新时间: 2022-11-12 15:39:28
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KEC 晶体晶体管局域网
页数 文件大小 规格书
4页 380K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA107_11 数据手册

 浏览型号KRA107_11的Datasheet PDF文件第2页浏览型号KRA107_11的Datasheet PDF文件第3页浏览型号KRA107_11的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRA107~KRA109  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
C
FEATURES  
· With Built-in Bias Resistors  
· Simplify Circuit Design  
· Reduce a Quantity of Parts and Manufacturing Process  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
F
1.27  
G
H
J
0.85  
EQUIVALENT CIRCUIT  
BIAS RESISTOR VALUES  
0.45  
_
14.00 +0.50  
H
TYPE NO.  
KRA107  
KRA108  
KRA109  
R1(k) R2(k)  
K
L
0.55 MAX  
2.30  
OUT  
F
F
10  
22  
47  
47  
47  
22  
M
0.45 MAX  
1.00  
N
R1  
IN  
3
1
2
1. EMITTER  
2. COLLECTOR  
3. BASE  
R2  
COMMON(+)  
TO-92  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
UNIT  
V
Output Voltage  
Input Voltage  
-50  
-30, 6  
-40, 7  
-40, 15  
-100  
KRA107109  
KRA107  
KRA108  
KRA109  
VI  
V
IO  
PD  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
625  
KRA107109  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
2011. 6. 14  
Revision No : 1  
1/4  

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