Datasheet > KRA114

KRA114

更新时间： 2024-01-31 17:36:56

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
4页	49K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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KRA114 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Base Number Matches：	1

KRA114 数据手册

SEMICONDUCTOR

KRA110~KRA114

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

· With Built-in Bias Resistors.

· Simplify Circuit Design.

· Reduce a Quantity of Parts and Manufacturing Process.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

EQUIVALENT CIRCUIT

0.85

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-50

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current

-100

625

℃

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55∼ 150

℃

2009. 2. 25

Revision No : 0

1/4

12 3 4

中文翻译

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