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KRA122

更新时间: 2024-09-21 05:41:03
品牌 Logo 应用领域
KEC 晶体晶体管开关局域网
页数 文件大小 规格书
7页 74K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA122 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):62
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KRA122 数据手册

 浏览型号KRA122的Datasheet PDF文件第2页浏览型号KRA122的Datasheet PDF文件第3页浏览型号KRA122的Datasheet PDF文件第4页浏览型号KRA122的Datasheet PDF文件第5页浏览型号KRA122的Datasheet PDF文件第6页浏览型号KRA122的Datasheet PDF文件第7页 
SEMICONDUCTOR  
KRA116~KRA122  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
B
C
FEATURES  
· With Built-in Bias Resistors.  
· Simplify Circuit Design.  
· Reduce a Quantity of Parts and Manufacturing Process.  
DIM MILLIMETERS  
N
A
B
C
D
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
E
F
1.27  
G
H
J
0.85  
0.45  
_
14.00 +0.50  
H
K
L
M
0.55 MAX  
2.30  
F
F
EQUIVALENT CIRCUIT  
BIAS RESISTOR VALUES  
0.45 MAX  
1.00  
N
TYPE NO.  
KRA116  
KRA117  
KRA118  
KRA119  
KRA120  
KRA121  
KRA122  
R1(k) R2(k)  
3
1
2
OUT  
1. EMITTER  
2. COLLECTOR  
3. BASE  
1
10  
2.2  
10  
2.2  
2.2  
4.7  
10  
R1  
IN  
R2  
TO-92  
10  
4.7  
10  
COMMON(+)  
47  
100  
100  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA116122  
KRA116  
KRA117  
KRA118  
KRA119  
KRA120  
KRA121  
KRA122  
-10, 5  
-12, 10  
-12, 5  
-20, 7  
-30, 10  
-40, 15  
-40, 10  
-100  
VI  
Input Voltage  
V
IO  
PD  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
625  
KRA116122  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
2009. 2. 25  
Revision No : 0  
1/7  

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