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KRA223

更新时间: 2024-09-21 05:41:03
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
5页 68K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA223 数据手册

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SEMICONDUCTOR  
KRA221~KRA226  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH CURRENT SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
C
FEATURES  
· With Built-in Bias Resistors.  
· Simplify Circuit Design.  
· Reduce a Quantity of Parts and Manufacturing Process.  
· High Output Current :-800mA.  
DIM MILLIMETERS  
N
A
B
C
D
E
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
F
1.27  
G
H
J
0.85  
0.45  
_
14.00 +0.50  
H
K
L
0.55 MAX  
2.30  
F
F
M
0.45 MAX  
1.00  
EQUIVALENT CIRCUIT  
BIAS RESISTOR VALUES  
N
3
1
2
TYPE NO.  
KRA221  
KRA222  
KRA223  
KRA224  
KRA225  
KRA226  
R1(k) R2(k)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
OUT  
1
1
R1  
IN  
2.2  
4.7  
10  
1
2.2  
4.7  
10  
10  
10  
R2  
TO-92  
COMMON(+)  
2.2  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
Output Voltage  
V
KRA221226  
KRA221  
KRA222  
KRA223  
KRA224  
KRA225  
KRA226  
-10, 10  
-12, 10  
-20, 10  
-30, 10  
-10, 5  
-12, 6  
-800  
VI  
Input Voltage  
V
IO  
PD  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
625  
KRA221226  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
2009. 2. 25  
Revision No : 0  
1/5  

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