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KRA116M_02 PDF预览

KRA116M_02

更新时间: 2024-09-21 11:31:27
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
7页 78K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KRA116M_02 数据手册

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SEMICONDUCTOR  
KRA116M~KRA122M  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
B
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
DIM  
A
MILLIMETERS  
3.20 MAX  
O
H
M
B
4.30 MAX  
Reduce a Quantity of Parts and Manufacturing Process.  
C
D
E
0.55 MAX  
_
2.40+0.15  
1.27  
F
G
H
J
2.30  
C
_
+
14.00 0.50  
0.60 MAX  
1.05  
E
E
K
1.45  
L
25  
M
N
0.80  
0.55 MAX  
3
1
2
N
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
O
0.75  
L
TYPE NO.  
KRA116M  
KRA117M  
KRA118M  
KRA119M  
KRA120M  
KRA121M  
KRA122M  
R1(k  
1
)
R2(k  
10  
)
1. COMMON (EMITTER)  
2. OUT (COLLECTOR)  
3. IN (BASE)  
2.2  
2.2  
4.7  
10  
2.2  
10  
R1  
IN  
R2  
TO-92M  
10  
4.7  
10  
COMMON(+)  
47  
100  
100  
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA116M 122M  
KRA116M  
KRA117M  
KRA118M  
KRA119M  
KRA120M  
KRA121M  
KRA122M  
-10, 5  
-12, 10  
-12, 5  
-20, 7  
-30, 10  
-40, 15  
-40, 10  
-100  
VI  
Input Voltage  
V
IO  
PD  
Tj  
Output Current  
mA  
Power Dissipation  
Junction Temperature  
400  
mW  
KRA116M 122M  
150  
Tstg  
Storage Temperature Range  
-55 150  
2002. 7. 2  
Revision No : 3  
1/7  

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