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KM68U1000CLTE-80 PDF预览

KM68U1000CLTE-80

更新时间: 2024-11-14 03:02:19
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
11页 219K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

KM68U1000CLTE-80 数据手册

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KM68V1000C, KM68U1000C Family  
CMOS SRAM  
Document Title  
128K x8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
Initial draft  
July 3, 1996  
Preliminary  
1.0  
Finalize  
December 16, 1996  
Final  
- Increased ISB, IDR  
Commercial part = 10mA  
Industrial part = 20mA  
2.0  
Revise  
November 25, 1997  
Final  
- Change speed bin  
KM68V1000C Family: 70/85ns ® 70/100ns  
KM68U1000C Family: 70/100ns ® 85/100ns  
- Improved operating current: 40mA ® 35mA  
- Improved power dissipation  
PD: 0.7W ® 1.0W  
- Improved standby current  
Extended/Industrial: 20 ® 10mA  
- VIL: 0.4V ® 0.6V  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 2.0  
November 1997  
1

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