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KM681001B PDF预览

KM681001B

更新时间: 2024-11-05 22:47:35
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 184K
描述
128K x 8 Bit High-Speed CMOS Static RAM

KM681001B 数据手册

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PRELIMINARY  
KM681001B  
CMOS SRAM  
Document Title  
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.  
Operated at Commercial and Industrial Temperature Range.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Feb. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1. Replace Design Target to Preliminary.  
Rev. 2.0  
Release to Final Data Sheet.  
Feb. 6th. 1998  
Final  
1. Delete Preliminary.  
2. Delete 17ns, L-version and Industrial Temperature Part.  
3. Delete Voh1=3.95V.  
4. Delete Data Retention Characteristics and Wave form.  
5. Relex operating current  
Speed  
15ns  
17ns  
20ns  
Previous  
130mA  
120mA  
110mA  
Now  
125mA  
-
123mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.0  
February 1998  
- 1 -  

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