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KM62V256CLTGE-10L PDF预览

KM62V256CLTGE-10L

更新时间: 2024-09-17 03:34:11
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 148K
描述
Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28

KM62V256CLTGE-10L 数据手册

 浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第2页浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第3页浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第4页浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第5页浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第6页浏览型号KM62V256CLTGE-10L的Datasheet PDF文件第7页 
KM62V256C, KM62U256C Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
0.1  
1.0  
2.0  
3.0  
Design target  
Initial draft  
Finalize  
February 12, 1993  
Advance  
November 2, 1993  
Preliminary  
September 24, 1994 Final  
Revised  
August 12, 1995  
April 1, 1997  
Final  
Final  
Revised  
- One datasheet for commercial, extended, industrial product.  
- Increased KM62V256C Family¢s ICC2 30 to 35mA.  
- Increased tDW 50 to 60ns for KM62U256C Family.  
- Remove SOP package from KM62V256C Family.  
4.0  
Revised  
February 12, 1998  
Final  
- Change datasheets format.  
- Improved power dissipation : 0.7W® 1W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 4.0  
February 1998  

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