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KM6164002CTI-150 PDF预览

KM6164002CTI-150

更新时间: 2024-11-09 10:16:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
11页 260K
描述
Standard SRAM, 256KX16, 15ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM6164002CTI-150 数据手册

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PRELIMPreliminaryPPPPPPPPPINARY  
CMOS SRAM  
KM6164002C, KM6164002CE, KM6164002CI  
Document Title  
256Kx16 Bit High Speed Static RAM(5V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Preliminary.  
Feb. 12. 1999  
Mar. 29. 1999  
Preliminary  
Preliminary  
1.1 Removed Low power Version.  
1.2 Removed Data Retention Characteristics  
1.3 Changed ISB1 to 20mA  
Rev. 2.0  
2.1 Relax D.C parameters.  
Aug. 19. 1999  
Preliminary  
Item  
Previous  
Current  
200mA  
195mA  
190mA  
12ns  
15ns  
20ns  
190mA  
185mA  
180mA  
ICC  
2.2 Relax Absolute Maximum Rating.  
Item  
Previous  
Current  
Voltage on Any Pin Relative to Vss  
-0.5 to 7.0  
-0.5 to Vcc+0.5  
3.1 Delete Preliminary  
Rev.3.0  
Mar. 27. 2000  
Final  
3.2 Update D.C parameters and 10ns part.  
Previous  
Current  
ICC  
-
200mA  
195mA  
190mA  
Isb  
Isb1  
ICC  
Isb  
Isb1  
10ns  
12ns  
15ns  
20ns  
185mA  
175mA  
165mA  
160mA  
70mA  
20mA  
60mA  
10mA  
3.3 Added Extended temperature range  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 3.0  
March 2000  
- 1 -  

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