是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP42,.6 |
针数: | 42 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.29 | 最长访问时间: | 100 ns |
其他特性: | IT CAN ALSO OPERATE AT 3.3V VCC | 备用内存宽度: | 8 |
JESD-30 代码: | R-PDIP-T42 | JESD-609代码: | e0 |
长度: | 52.42 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 42 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP42,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最大待机电流: | 0.00003 A | 子类别: | MASK ROMs |
最大压摆率: | 0.04 mA | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V16000DG | SAMSUNG |
获取价格 |
MASK ROM | |
KM23V16000DG-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V16000DT-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23V16000DT-12 | SAMSUNG |
获取价格 |
MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23V16005BG-10 | SAMSUNG |
获取价格 |
MASK ROM, 2MX8, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V16005BG-12 | SAMSUNG |
获取价格 |
MASK ROM, 2MX8, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V16005DG-12 | SAMSUNG |
获取价格 |
MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V16100A-35 | SAMSUNG |
获取价格 |
MASK ROM, 2MX8, 350ns, CMOS, PDIP36, 0.600 INCH, PLASTIC, DIP-36 | |
KM23V16101A-35 | SAMSUNG |
获取价格 |
MASK ROM, 2MX8, 350ns, CMOS, PDIP36, 0.600 INCH, PLASTIC, DIP-36 | |
KM23V16205BSG-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX16, 100ns, CMOS, PDSO70, 0.500 INCH, SSOP-70 |