Datasheet > KDB2532

KDB2532

更新时间： 2024-01-10 06:05:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	52K
描述
N-Channel PowerTrench MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KDB2532 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

KDB2532^(FDB2532)

TO-263

Unit: mm

Features

+0.2

-0.2

4.57

+0.1

1.27

-0.1

rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A

Qg(tot) = 82nC (Typ.), VGS = 10V

Low Miller Charge

Low QRR Body Diode

+0.1

-0.1

0.1max

1.27

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current-Continuous T^C=25

T^A=25

Symbol

V^DSS

Rating

Unit

150

V^GSS

Power dissipation

310

2.07

Derate above 25

Thermal Resistance Junction to Ambient

Channel temperature

Storage temperature

RèJA

Tch

175

Tstg

-55 to +175

www.kexin.com.cn

中文翻译

下载PDF

与KDB2532相关器件

型号	品牌	获取价格	描述	数据表
KDB2552	KEXIN	获取价格	N-Channel PowerTrench MOSFET
KDB2552	TYSEMI	获取价格	rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A UIS Capability (Single Pulse and Repetitive Puls
KDB2570	TYSEMI	获取价格	22 A, 150 V. RDS(ON) = 80 m VGS = 10 V Fast switching speed Low gate charge
KDB2570	KEXIN	获取价格	150V N-Channel PowerTrench MOSFET
KDB2572	KEXIN	获取价格	N-Channel PowerTrench MOSFET
KDB2572	TYSEMI	获取价格	rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A UIS Capability (Single Pulse and Repetitive Pulse
KDB2670	KEXIN	获取价格	200V N-Channel PowerTrench MOSFET
KDB2670	TYSEMI	获取价格	19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
KDB32	DYELEC	获取价格	Ideally Suited for Automatic Assembly
KDB325	DYELEC	获取价格	Ideally Suited for Automatic Assembly