Datasheet > KDB2570

KDB2570

更新时间： 2024-02-13 21:09:48

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	51K
描述
150V N-Channel PowerTrench MOSFET

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中文翻译

获取价格

数据手册

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KDB2570 数据手册

SMD Type

MOSFET

150V N-Channel PowerTrench MOSFET

KDB2570^(FDB2570)

TO-263

Unit: mm

Features

22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V

R^DS(ON)= 90 m @ VGS = 6 V

Low gate charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Fast switching speed

+0.1

-0.1

0.1max

1.27

High performance trench technology for extremely

low R^DS(ON)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

150

Unit

Drain current-Continuous

Drain current-Pulsed

I^DP

Power dissipation

0.63

62.5

1.6

Derate above 25

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

RèJA

R^èJC

T^ch

175

Storage temperature

Tstg

-55 to +175

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