Datasheet > KDB3652

KDB3652

更新时间： 2024-02-22 04:04:16

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	53K
描述
N-Channel PowerTrench MOSFET

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中文翻译

获取价格

数据手册

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KDB3652 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

KDB3652 ^(FDB3652)

TO-263

Unit: mm

Features

rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A

Qg(tot) = 41nC (Typ.), VGS = 10V

Low Miller Charge

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Low QRR Body Diode

+0.1

-0.1

0.1max

1.27

UIS Capability (Single Pulse and Repetitive Pulse)

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

Rating

Unit

100

Gate to source voltage

V^GSS

Drain current-Continuous

T^C=25

T^A=25

150

Power dissipation

Derate above 25

1.0

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

RèJA

R^èJC

T^ch

1.0

175

Storage temperature

Tstg

-55 to +175

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