Datasheet > KDB6030L

KDB6030L

更新时间： 2024-01-30 00:42:01

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	58K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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KDB6030L 数据手册

SMD Type

TransistIoCrs

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

KDB6030L

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V

R^DS(ON)= 0.020 @ VGS = 4.5 V

Low gate charge (typical 34 nC).

Low Crss (typical 175 pF).

+0.1

1.27

-0.1

0.1max

Fast switching speed.

+0.1

0.81

-0.1

2.54

1 gate

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 drain

2 Drain

3 source

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

V^GS

Drain Current Continuous

I^D

Drain Current Pulsed

156

Power dissipation @ T^C=25

Derate above 25

0.5

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

TJ, TSTG

-65 to 175

62.5

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