Datasheet > KDB5690

KDB5690

更新时间： 2024-09-23 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	59K
描述
N-Channel PowerTrenchTMMOSFET

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中文翻译

获取价格

数据手册

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KDB5690 数据手册

SMD Type

TransistIoCrs

N-Channel PowerTrench^TMMOSFET

KDB5690

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V

R^DS(ON)= 0.032 @ VGS = 6 V

Critical DC electrical parameters specified at

elevated temperature.

+0.1

1.27

-0.1

0.1max

Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

High performance trench technology for extremely low RDS(ON).

175 maximum junction temperature rating.

+0.1

0.81

-0.1

2.54

1 gate

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 drain

2 Drain

3 source

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

Unit

Gate to Source Voltage

Drain Current Continuous

Drain Current Pulsed

V^GS

100

I^D

Power dissipation @ T^C=25

0.4

Derate above 25

Operating and Storage Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

TJ, TSTG

-65 to 175

2.6

62.5

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