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KBU610-G PDF预览

KBU610-G

更新时间: 2024-09-17 04:22:03
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 50K
描述
Silicon Bridge Rectifiers

KBU610-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-W4最大非重复峰值正向电流:175 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU610-G 数据手册

 浏览型号KBU610-G的Datasheet PDF文件第2页 
Silicon Bridge Rectifiers  
KBU600-G thru 610-G (RoHS Device)  
Reverse Voltage: 50 ~ 1000 Volts  
A
Forward Current: 6.0 Amp  
C
B
D
Features:  
Diffused Junction  
KBU  
Min  
Dim  
A
Max  
K
L
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
22.7 23.70  
_
_
_
+
E
B
3.80  
4.20  
1.70  
4.10  
4.70  
2.20  
C
D
E
G
H
J
K
L
M
N
P
High Surge Current Capability  
Ideal for Printed Circuit Boards  
10.30 11.30  
J
G
4.50  
4.60  
25.40  
-
6.80  
5.60  
-
Mechanical Data:  
H
19.30  
Case: Molded Plastic  
M
16.80 17.80  
Terminals: Plated Leads Solderable per MIL  
STD-202, Method 208  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
6.60  
4.70  
1.20  
7.10  
5.20  
1.30  
All Dimensions in mm  
Marking: Type Number  
N
P
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
CHARACTERISTICS  
UNIT  
V
Symbol  
600-G 601-G 602-G 604-G 606-G 608-G 610-G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
RWM  
V
R
V
RMS Reverse Voltage  
280  
6.0  
V
A
R(RMS)  
IO  
Average Rectified Output Current @ T = 100ºC  
A
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half Sine-Wave Superimposed on rated load  
(JEDEC Method)  
I
FSM  
250  
1.0  
A
V
V
Forward Voltage (per element) @ I =3.0A  
FM  
F
Peak Reverse Current  
@T =25ºC  
C
10  
1.0  
uA  
mA  
I
R
At Rated DC Blocking Voltage @T =100ºC  
C
I t  
166  
4.2  
A2S  
2
Rating for Fusing (t<8.3ms) (Note1)  
Typical Thermal Resistance (Note2)  
Operating and Storage Temperature Range  
Rθ  
K/W  
JC  
T T  
j
STG  
-65 to +150  
ºC  
Note:  
1. Non-repetitive for t>1ms and <8.3ms.  
2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas.  
“-G” suffix designated RoHS compliant version  
.
.
.
Page1  
Comchip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com  

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