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KBU4M-E4/51 PDF预览

KBU4M-E4/51

更新时间: 2024-09-18 01:24:11
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
3页 64K
描述
Single-Phase Bridge Rectifier

KBU4M-E4/51 技术参数

是否无铅:不含铅生命周期:Active
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:1.57Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Silver (Ag)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

KBU4M-E4/51 数据手册

 浏览型号KBU4M-E4/51的Datasheet PDF文件第2页浏览型号KBU4M-E4/51的Datasheet PDF文件第3页 
KBU4A, KBU4B, KBU4D, KBU4G, KBU4J, KBU4K, KBU4M  
www.vishay.com  
Vishay General Semiconductor  
Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
• Ideal for printed circuit boards  
e4  
• High surge current capability  
• High case dielectric strength of 1500 VRMS  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style KBU  
~
~
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
General purpose use in AC/DC bridge full wave rectification  
for monitor, TV, printer, SMPS, adapter, audio equipment,  
and home appliances applications.  
Package  
KBU  
4 A  
IF(AV)  
50 V, 100, V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
IFSM  
IR  
200 A  
5 μA  
Case: KBU  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E4 - RoHS-compliant, commercial grade  
VF at IF = 4 A  
TJ max.  
1.0 V  
150 °C  
In-Line  
Terminals: Silver plated leads, solderable per  
J-STD-002 and JESD22-B102  
Diode variations  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
4.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
T
C = 100 °C (1)  
Maximum average forward  
rectified output current at  
IF(AV)  
IFSM  
A
TA = 30 °C (2)  
4.0  
Peak forward surge current single sine-wave  
superimposed on rated load  
200  
A
Operating junction and storage temperature range TJ, TSTG  
- 50 to + 150  
°C  
Notes  
(1)  
Units mounted on a 2.0" x 1.6" x 0.3" thick (5 cm x 4 cm x 0.8 cm) aluminum plate  
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length  
(2)  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL KBU4A KBU4B KBU4D KBU4G KBU4J KBU4K KBU4M UNIT  
Maximum instantaneous  
forward drop per diode  
IF = 4.0 A  
VF  
IR  
1.0  
V
Maximum DC reverse  
current at rated DC blocking  
voltage per diode  
TA = 25 °C  
5.0  
1.0  
μA  
TA = 125 °C  
mA  
Revision: 14-May-14  
Document Number: 88656  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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