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KBPC2501W PDF预览

KBPC2501W

更新时间: 2024-09-10 02:55:19
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 334K
描述
Single Phase Silicon Bridge Rectifier

KBPC2501W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.55Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:350 A
元件数量:4最高工作温度:150 °C
最大输出电流:25 A最大重复峰值反向电压:100 V
子类别:Bridge Rectifier Diodes表面贴装:NO
Base Number Matches:1

KBPC2501W 数据手册

 浏览型号KBPC2501W的Datasheet PDF文件第2页浏览型号KBPC2501W的Datasheet PDF文件第3页 
KBPC25005T/W thru KBPC2504T/W  
VRRM = 50 V - 400 V  
IO = 25 A  
Single Phase Silicon  
Bridge Rectifier  
Features  
• High efficiency  
• Silicon junction  
• Metal case  
• Types from 50 V to 400 V VRRM  
• Not ESD Sensitive  
KBPC-T/W Package  
Mechanical Data  
Case: Mounted in the bridge encapsulation  
Mounting: Hole for #10 screw  
Polarity: Marked on case  
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW  
uses KBPC-W package)  
KBPC2502T/W KBPC2504T/W  
KBPC25005T/W KBPC2501T/W  
Conditions  
Parameter  
Symbol  
Unit  
VRRM  
VRMS  
VDC  
Tj  
200  
140  
400  
280  
Repetitive peak reverse voltage  
RMS reverse voltage  
50  
35  
100  
70  
V
V
200  
400  
DC blocking voltage  
50  
100  
V
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics at Tc = 25 °C, unless otherwise specified  
Single phase, half sine wave, 60 Hz, resistive or inductive load  
For capacitive load derate current by 20%  
KBPC2502T/W KBPC2504T/W  
KBPC25005T/W KBPC2501T/W  
Conditions  
Parameter  
Symbol  
Unit  
Maximum average forward rectified  
current  
Tc = 55 °C  
IO  
25  
350  
1.1  
25  
350  
1.1  
25  
350  
1.1  
25  
350  
1.1  
A
8.3 ms half sine-wave  
IF = 12.5 A  
IFSM  
VF  
Peak forward surge current  
Maximum instantaneous forward  
voltage per leg  
A
V
Tc = 25 °C  
5
5
5
5
Maximum DC reverse current at  
rated DC blocking voltage per leg  
IR  
μA  
Tc = 100 °C  
500  
300  
500  
300  
500  
300  
500  
300  
Typical junction capacitance 1  
Thermal characteristics  
Typical thermal resistance 2  
Cj  
pF  
RΘJC  
°C/W  
1.9  
1.9  
1.9  
1.9  
1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.  
2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink  
1
www.genesicsemi.com/silicon-products/bridge-rectifiers/  

KBPC2501W 替代型号

型号 品牌 替代类型 描述 数据表
KBPC2501T GENESIC

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Single Phase Silicon Bridge Rectifier
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