5秒后页面跳转
KBPC1010 PDF预览

KBPC1010

更新时间: 2024-09-20 05:11:31
品牌 Logo 应用领域
DAESAN /
页数 文件大小 规格书
2页 239K
描述
CURRENT 10.0 Amperes VOLTAGE 50 to 1000 Volts

KBPC1010 数据手册

 浏览型号KBPC1010的Datasheet PDF文件第2页 
CURRENT 10.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBPC10005 THRU KBPC1010  
Features  
· Diffused Junction  
· High Current Capability  
· Surge Overload Rating to 150A Peak  
· High Case Dielectric Strength of 1500V  
· Ideal for Printed Circuit Board Applications  
· Plastic Material - UL Flammability Classification 94V-0  
H
AC  
G
+
A
AC  
-
E
K B P C -8  
Min  
D
C
B
Dim  
A
Max  
19.56  
7.60  
18.54  
6.35  
Mechanical Data  
B
C
22.20  
O
1.27 Typical  
A
· Case : Molded Plastic  
· Terminals : Plated Leads Solderable per  
MIL-STD-202, Method 208  
D
E
/
5.33  
7.37  
O
/
O
4.00  
G
H
J
3.60  
/
12.70 Typical  
2.38 X 45o Typical  
· Polarity : Marked on Body  
· Mounting : Through Hole for #6 Screw  
· Mounting Torque : 5.0 Inch-pounds Maximum  
· Weight : 5.4 grams (approx.)  
· Marking : Type Number  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBPC KBPC KBPC KBPC KBPC KBPC KBPC  
10005 1001 1002 1004 1006 1008 1010  
Symbols  
Units  
Peak Repetitive Reverse voltage  
Working Peak Reverse voltage  
DC Blocking voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse voltage  
V
R(RMS)  
280  
Volts  
@ T  
C
C
=50℃  
=50℃  
Average Rectified  
Output Current  
(Note 1)  
(Note 2)  
10  
8.0  
Io  
Amps  
@ T  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load (JEDEC method)  
I
FSM  
150  
Amps  
Volts  
V
FM  
1.1  
Forward Voltage (per element)  
@ IF=5 A  
μA  
@ T  
C
C
=25℃  
10  
1.0  
64  
Peak Reverse Current at Rated  
DC Blocking voltage (per element)  
I
R
mA  
@ T  
=125℃  
I2t Rating for Fusing (t<8.3ms) (Note 3)  
I2t  
A2  
S
Typical Junction Capacitance  
per element (Note 4)  
C
j
110  
7.5  
pF  
Typical Thermal Resistance,  
Junction to Case (per element)  
/W  
RθJA  
T
STG  
j
Operating and Storage Temperature Range  
-65 to +125  
T
Notes:  
(1) Mounted on metal chassis.  
(2) Mounted on PC board FR-4 material.  
(3) Non-repetitive, for t > 1.0ms and < 8.3ms.  
(4) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  

与KBPC1010相关器件

型号 品牌 获取价格 描述 数据表
KBPC10-10 ETC

获取价格

10 to 40 Amp SINGLE PHASE SILICON BRIDGE
KBPC1010(W) LGE

获取价格

暂无描述
KBPC1010F DIOTEC

获取价格

Silicon-Bridge Rectifiers
KBPC1010F SEMIKRON

获取价格

Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, 28.60 X 28.60 MM, 7.30 MM HEI
KBPC1010F/W SEMIKRON

获取价格

Silicon-Bridge Recitifers
KBPC1010F/W DIOTEC

获取价格

Rectifier Diode,
KBPC1010FM DIOTEC

获取价格

Bridge Rectifier Diode, 10A, 1000V V(RRM),
KBPC1010FP DIOTEC

获取价格

Bridge Rectifier Diode, 1 Phase, 10A, 1400V V(RRM), Silicon, 28.60 X 28.60 MM, 7.30 MM HEI
KBPC1010FW DIOTEC

获取价格

Silicon-Bridge Rectifiers
KBPC1010FW SEMIKRON

获取价格

Silicon-Bridge Recitifers