KBPC1004

更新时间： 2024-09-07 22:47:43

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
3页	49K
描述
10A HIGH CURRENT BRIDGE RECTIFIER

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中文翻译

获取价格

数据手册

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KBPC1004 数据手册

WTE

PO WER SEMICONDUCTORS

KBPC1000/W – KBPC1010/W

10A HIGH CURRENT BRIDGE RECTIFIER

Features

Diffused Junction

Low Reverse Leakage Current

Low Power Loss, High Efficiency

Electrically Isolated Metal Case for

Maximum Heat Dissipation

Case to Terminal Isolation Voltage 2500V

UL Recognized File # E157705

Mechanical Data

Case: Metal Case with Electrically

Isolated Epoxy

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Symbols Marked on Case

Mounting: Through Hole for #10 Screw

KBPC

KBPC-W

KBPC

KBPC-W

Min

Dim

Min

Max

28.70

11.23

16.70

18.50

25.40

Max

28.70

11.23

19.10

11.90

—

28.40

10.97

15.70

17.50

22.86

28.40

10.97

17.10

10.90

30.50

Weight:

KBPC

KBPC-W 28.5 grams (approx.)

Marking: Type Number

31.6 grams (approx.)

"W” Suffix Designates Wire Leads

Hole for #10 screw, 5.08Ø Nominal

6.35 Typical 0.97Ø 1.07Ø

All Dimension in mm

No Suffix Designates Faston Terminals

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBPC KBPC KBPC KBPC KBPC KBPC KBPC

1000/W 1001/W 1002/W 1004/W 1006/W 1008/W 1010/W

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current @T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

FSM

200

1.2

Forward Voltage (per element)

@I_F= 5.0A

V^FM

I^RM

Peak Reverse Current

@T_C= 25°C

1.0

µA

At Rated DC Blocking Voltage @T_C= 125°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

300

6.3

K/W

R^ꢀ^JC

V^ISO

RMS Isolation Voltage from Case to Lead

Operating and Storage Temperature Range

2500

T^j, T^STG

-65 to +150

°C

* Glass passivated forms are available upon request.

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case per element mounted on heatsink.

KBPC1000/W – KBPC1010/W

1 of 3

12 3

中文翻译

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与KBPC1004相关器件

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KBPC1004F	DIOTEC	获取价格	Silicon-Bridge Rectifiers
KBPC1004F/W	SEMIKRON	获取价格	Silicon-Bridge Recitifers
KBPC1004F/W	DIOTEC	获取价格	Rectifier Diode
KBPC1004FM	DIOTEC	获取价格	暂无描述
KBPC1004FP	SEMIKRON	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon
KBPC1004FP	DIOTEC	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 1600V V(RRM), Silicon, 28.60 X 28.60 MM, 7.30 MM HEI
KBPC1004FW	DIOTEC	获取价格	Silicon-Bridge Rectifiers
KBPC1004FW	SEMIKRON	获取价格	Silicon-Bridge Recitifers