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KBP2005G-7 PDF预览

KBP2005G-7

更新时间: 2024-01-22 08:06:58
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
3页 66K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBP, 4 PIN

KBP2005G-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSIP-T4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.3Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSIP-T4JESD-609代码:e3
最大非重复峰值正向电流:65 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:50 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

KBP2005G-7 数据手册

 浏览型号KBP2005G-7的Datasheet PDF文件第2页浏览型号KBP2005G-7的Datasheet PDF文件第3页 
KBP2005G - KBP210G  
2.0A GLASS PASSIVATED BRIDGE RECTIFIER  
SPICE MODELS: KBP005G KBP01G KBP02G KBP04G KBP06G KBP08G KBP10G  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
Surge Overload Rating to 65A Peak  
Ideal for Printed Circuit Board Applications  
Plastic Material - UL Flammability  
Classification 94V-0  
UL Listed Under Recognized Component  
Index, File Number E94661  
KBP  
Dim  
A
Min  
Max  
14.75  
10.60  
14.25  
10.20  
L
B
A
K
J
C
2.29 Typical  
M
N
D
14.25  
3.56  
0.76  
1.17  
14.73  
4.06  
0.86  
1.42  
B
·
E
_
+
G
H
C
H
G
Mechanical Data  
2.8 X 45°  
Chamfer  
J
D
·
·
Case: Molded Plastic  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
P
K
L
0.80  
3.35  
1.10  
3.65  
·
Also Available in Lead Free Plating (Matte Tin  
Finish). Please see Ordering Information,  
Note 4, on Page 3  
Polarity: Marked on Body  
Approx. Weight: 1.52 grams  
Mounting Position: Any  
Marking: Type Number  
M
N
P
3° Nominal  
2° Nominal  
0.30 0.64  
E
·
·
·
·
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
KBP  
KBP  
202G  
KBP  
204G  
KBP  
206G  
KBP  
208G  
KBP  
210G  
Characteristic  
Symbol  
Unit  
2005G 201G  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
2.0  
V
A
Average Rectified Output Current  
@ TC = 105°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
65  
A
Forward Voltage per element  
@ IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC 25°C  
=
5.0  
500  
µA  
@ TC = 125°C  
CT  
Typical Total Capacitance per Element (Note 2)  
Typical Thermal Resistance (Note 1)  
25  
14  
pF  
°C/W  
°C  
RqJC  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS21205 Rev. 8 - 2  
1 of 3  
KBP2005G-KBP210G  
www.diodes.com  
ã Diodes Incorporated  

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