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KBP200-G PDF预览

KBP200-G

更新时间: 2024-11-25 04:22:07
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
3页 58K
描述
Silicon Bridge Rectifiers

KBP200-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
Base Number Matches:1

KBP200-G 数据手册

 浏览型号KBP200-G的Datasheet PDF文件第2页浏览型号KBP200-G的Datasheet PDF文件第3页 
Silicon Bridge Rectifiers  
KBP200-G thru 2010-G (RoHS Device)  
Reverse Voltage: 50 ~ 1000 Volts  
Forward Current: 2.0 Amp  
Features:  
Diffused Junction  
KBP  
A
Low Forward Voltage Drop  
High Reliability  
B
C
H
KBP  
Min.  
14.22  
10.67  
11.68  
4.57  
3.60  
2.16  
12.70  
0.76  
1.52  
+ ~ ~ -  
High Current Capability  
Dim  
Max  
15.24  
11.68  
12.70  
5.08  
4.10  
2.67  
-
A
B
C
D
E
G
H
J
High Surge Current Capability  
Ideal for Printed Circuit Boards  
J
Mechanical Data:  
0.88  
Case: Molded Plastic  
G
I
E
I
D
Terminals: Plated Leads Solderable Per MIL  
STD-202, Method 208  
All Dimension in mm  
Weight: 1.7 grams (approx.)  
Mounting position: Any  
Maximum Ratings and Electrical Characteristics  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate currently by 20%.  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
KBP  
Symbol  
Characteristics  
UNIT  
V
200-G 201-G 202-G 204-G 206-G 208-G 2010-G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
R
V
A
RMS Reverse Voltage  
280  
2.0  
V
R(RMS)  
Average Rectified Output Current (Note1) @ T = 50ºC  
I
o
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single  
half-sine-wave superimposed on rated load (JEDEC  
Method)  
I
FSM  
60  
A
1.1  
V
V
FM  
RM  
2
Forward Voltage (per element) @ I =2.0A  
F
10  
500  
Peak Reverse Current @ T =25ºC  
uA  
A
I
At Rated DC Blocking Voltage @ T =100ºC  
A
2
Rating for Fusing (t<8.3ms)  
A S  
I t  
15  
30  
Typical Thermal Resistance (Note3)  
Operating and Storage Temperature Range  
Typical Junction Capacitance per element (Note2)  
K/W  
ºC  
R
θJA  
TJ, TSTG  
CJ  
-55 to +160  
25  
pF  
Note:  
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.  
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.  
“-G” suffix designated RoHS compliant version  
.
.
.
Page1  
Comhip Technology Corporation Tel:510-657-8671 Fax: 510-657-8921 www.comchiptech.com  

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