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KBJ10G PDF预览

KBJ10G

更新时间: 2024-02-03 12:29:27
品牌 Logo 应用领域
CHENG-YI /
页数 文件大小 规格书
2页 158K
描述
SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS

KBJ10G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.24
Is Samacsys:N其他特性:HIGH RELIABILITY, UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
湿度敏感等级:1最大非重复峰值正向电流:170 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBJ10G 数据手册

 浏览型号KBJ10G的Datasheet PDF文件第2页 
GBJ/KBJ10A thru GBJ/KBJ10M  
SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS  
GGLLAASSSS PPAASSSSIIVVAATTEEDD  
CCHHEENNGG--YYII  
BBRRIIDDGGEE RREECCTTIIFFIIEERRSS  
ELECTRONIC  
REVERSE VOLTAGE -50 to 1000 Volts  
FORWARD CURRENT -10.0 Amperes  
HIKE FOR NO.  
6 SCRES  
5.16  
FEATURES  
Rating to 1000V PRV  
Ideal for printed circuit board  
Low forward voltage drop, high current capability  
Reliable low cost construction utilizing  
molded plastic technique results in  
inexpensive product  
SPACING  
The plastic material has UL  
flammability classification 94V-O  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
0
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ  
GBJ  
KBJ  
10B  
GBJ  
GBJ  
KBJ  
GBJ  
KBJ  
10J  
GBJ  
KBJ  
10K  
GBJ  
KBJ  
SYMBOL  
CHARACTERISTICS  
KBJ  
KBJ  
UNITS  
10A  
10D  
10G  
10M  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Voltage  
100  
1000  
10.0  
3.0  
Maximum Average Forward (with heatsink Note 2)  
I(AV)  
A
0
Rectified Current @ T =110 C (without heatsink)  
C
Peak Forward Surge Current  
8.3 ms single half sine-wave  
IFSM  
200  
A
superimposed on rated load (JEDEC Method)  
V
1.05  
5.0  
V
F
Maximum Forward Voltage at 5.0A DC  
0
=25 C  
T
J
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
@
@
IR  
A
0
=125 C  
T
J
500  
120  
2
2
2
A S  
I t Rating for fusing (t<8.3ms)  
I t  
Typical Junction Capacitance  
per element (Note 1)  
F
P
C
55  
J
0
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
1.4  
R
JC  
C/W  
0
T
-55 to +150  
-55 to +150  
C
J
0
TSTG  
C
NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 150mm x 150mm X 1.6mm Cu Plate Heatsink.  

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