KBJ10M

更新时间： 2024-11-13 22:32:27

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	53K
描述
10A BRIDGE RECTIFIER

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中文翻译

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数据手册

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KBJ10M 数据手册

WTE

POWER SEMICONDUCTORS

KBJ10A – KBJ10M

10A BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

KBJ-4

Dim

Min

24.7

14.7

—

Max

25.3

15.3

4.0

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ J

17.0

3.3

18.0

3.7

3.1Ø

1.05

1.7

3.4Ø

1.45

2.1

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 4.0 grams (approx.)

Mounting Position: Any

0.9

1.1

1.5

1.9

4.8

5.16

4.4

3.8

7.3

7.7

Marking: Type Number

9.3

9.7

3.4

3.9

0.6

0.8

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol KBJ10A KBJ10B KBJ10D KBJ10G KBJ10J KBJ10K KBJ10M Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

Average Rectified Output Current @T_C= 100°C

@T_A= 25°C

3.0

I^O

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

170

I²t Rating for Fusing (t < 8.35ms)

I²t

120

A²s

Forward Voltage (per diode)

Peak Reverse Current

@I_F= 5.0A

V^FM

I^R

1.05

@T_A= 25°C

5.0

500

µA

At Rated DC Blocking Voltage @T_C= 100°C

Typical Thermal Resistance (Note 1)

R^ꢀ^JC

2.5

°C/W

°C

Operating and Storage Temperature Range

T^j,T^STG

-55 to +150

Note: 1. Thermal resistance junction to case, mounted on 150 x 150 x 1.6mm thick Cu plate heatsink.

KBJ10A – KBJ10M

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中文翻译

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