Datasheet > KBJ10M

KBJ10M

更新时间： 2024-11-14 04:22:11

品牌	Logo	应用领域
DAESAN		二极管
页数	文件大小	规格书
2页	241K
描述
CURRENT 10.0 Amperes VOLTAGE 50 to 1000 Volts

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中文翻译

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KBJ10M 数据手册

CURRENT 10.0 Amperes

VOLTAGE 50 to 1000 Volts

KBJ10A THRU KBJ10M

Features

· Glass Passivated Die Construction

· High Case Dielectric Strength of 1500VRMS

· Low Reverse Leakage Current

· Surge Overload Rating to 170A Peak

· Ideal for Printed Circuit Board Applications

· Plastic Material - UL Flammability Classification 94V-0

K B J

Mechanical Data

Dim

Min

29.70

19.70

17.00

3.80

Max

Dim

Min

Max

30.30

20.30

18.00

4.20

2.30

2.70

· Case : Molded Plastic

· Terminals : Plated Leads, Solderable per

MIL-STD-202, Method 208

3.0 X 45

4.40

3.40

3.10

2.50

0.60

10.80

4.80

3.80

3.40

2.90

0.80

11.20

· Polarity : Molded on Body

7.30

7.70

· Mounting : Through Hole for #6 Screw

· Mounting Torque : 5.0 in-Ibs Maximum

· Weight : 6.6 grams (approx.)

· Marking : Type Number

9.80

10.20

2.40

2.00

0.90

1.10

All Dimens ions in mm

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

KBJ

10A

KBJ

10B

KBJ

10D

KBJ

10G

KBJ

10J

KBJ

10K

KBJ

10M

Symbols

Units

Peak Repetitive Reverse voltage

Working Peak Reverse voltage

DC Blocking voltage

RMM

RWM

100

200

140

400

600

420

800

560

1000

700

Volts

RMS Reverse voltage

R(RMS)

280

Volts

Average Rectified Output Current @ T

=110

Amps

℃

Non-Repetitive Peak Forward Surge Current,

8.3ms single half-sine-wave superimposed

on rated load (JEDEC method)

FSM

170

Amps

VFM

1.05

Volts

Forward Voltage per element

@ IF=5.0 A

@ T

=25℃

Peak Reverse Current at Rated

DC Blocking voltage

μA

C=125℃

500

120

I²t Rating for Fusing (t<8.3ms) (Note 1)

I²t

A²

Typical Junction Capacitance

per element (Note 2)

Typical Thermal Resistance,

Junction to Case (Note 3)

4.0

℃/W

RθJA

STG

Operating and Storage Temperature Range

-65 to +150

℃

Notes:

(1) Non-repetitive, for t > 1.0ms and < 8.3ms.

(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

(3) Thermal Resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.

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