KBJ1006G - KBJ1010G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Symbol
KBJ1006G
600
KBJ1008G
800
KBJ1010G
1000
Unit
V
VRRM
VRMS
VDC
420
560
700
V
Maximum DC Blocking Voltage
600
800
1000
V
Average Rectified Output Current
@TC = +110°C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
TJ = +25°C
With Heatsink
Without Heatsink
10
3.0
A
A
IF(AV)
170
IFSM
I2t Rating for Fusing (t = 8.3ms)
Operating Temperature Range
Storage Temperature Range
I2t
TJ
A2s
°C
120
-55 to +150
-55 to +150
TSTG
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Forward Voltage
Test Condition
Symbol
Max
Unit
1.1
V
IF = 5.0A
TJ = +25°C
VF
TJ = +25°C
TJ = +125°C
5.0
500
Leakage Current
µA
pF
VR at Rated
IR
Typical Junction Capacitance (Note 5)
45
CJ
Thermal Characteristics
Characteristic
Typical Thermal Resistance (Note 6)
Symbol
Typ.
Unit
2.0
°C/W
RJC
Notes:
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. Unit mounted on 150mm * 150mm * 1.6mm cu plate heatsink.
2 of 5
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November 2021
© Diodes Incorporated
KBJ1006G – KBJ1010G
Document number: DS43641 Rev. 2 - 2