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KA4A3Q-AZ PDF预览

KA4A3Q-AZ

更新时间: 2024-11-18 13:09:07
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日电电子 - NEC 晶体小信号双极晶体管光电二极管
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22页 373K
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KA4A3Q-AZ 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
KA4xxx  
RESISTOR BUILT-IN TYPE NPN TRANSISTOR  
FEATURES  
PACKAGE DRAWING (Unit: mm)  
Compact package  
Resistors built-in type  
Complementary to KN4xxx  
+0.1  
–0  
0.3  
+0.1  
0.15  
–0.05  
3
ORDERING INFORMATION  
PART NUMBER  
0 to 0.1  
PACKAGE  
2
1
+0.1  
0.2  
–0  
KA4xxx  
SC-75 (USM)  
0.6  
0.5  
0.5  
0.75 0.05  
1.0  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
1.6 0.1  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse) Note  
Total Power Dissipation  
Junction Temperature  
VCBO  
VCEO  
VEBO  
IC  
IC(pulse)  
PT  
60  
50  
5
0.1  
0.2  
V
V
V
A
A
W
°C  
°C  
EQUIVALENT CIRCUIT  
PIN CONNECTION  
1: Emitter  
3
2: Base  
0.2  
150  
3: Collector  
2
Tj  
Storage Temperature  
Tstg  
–55 to +150  
R
1
Note PW 10 ms, Duty Cycle 50%  
R
2
1
PART NUMBER  
KA4A4M  
KA4F4M  
KA4L4M  
KA4L3M  
KA4L3N  
MARK  
A4  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
PART NUMBER  
KA4L4L  
MARK  
K4  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
10.0  
22.0  
47.0  
4.7  
10.0  
22.0  
47.0  
4.7  
47.0  
10.0  
22.0  
47.0  
2.2  
22.0  
B4  
KA4A4Z  
KA4F4Z  
Y4  
C4  
Z4  
D4  
KA4L4Z  
N4  
P4  
E4  
4.7  
10.0  
KA4F3M  
KA4F3P  
KA4F3R  
KA4A4L  
2.2  
10.0  
47.0  
4.7  
KA4L3Z  
F4  
4.7  
Q4  
R4  
S4  
2.2  
KA4A3Q  
KA4A4P  
KA4F4N  
G4  
H4  
1.0  
10.0  
47.0  
47.0  
2.2  
10.0  
22.0  
10.0  
47.0  
X4  
KA4L4K  
T4  
10.0  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
The mark  
shows major revised points.  
Document No. D16495EJ3V0DS00 (3rd edition)  
Date Published October 2004 NS CP(K)  
Printed in Japan  
2002  

与KA4A3Q-AZ相关器件

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KA4A3Q-T1 RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A3Q-T1-AT RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A3Q-T2-A RENESAS

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KA4A3Q-T2-AT RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
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RESISTOR BUILT-IN TYPE NPN TRANSISTOR
KA4A4L RENESAS

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4L-AT RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4L-AZ NEC

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4L-AZ RENESAS

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100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN
KA4A4L-T1 RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75