Datasheet > KA4A3Q-T1

KA4A3Q-T1

更新时间： 2024-11-05 08:33:55

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
22页	336K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75

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中文翻译

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数据手册

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KA4A3Q-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

PACKAGE DRAWING (Unit: mm)

• Compact package

• Resistors built-in type

• Complementary to KN4xxx

+0.1

–0

0.3

+0.1

–0.05

0.15

ORDERING INFORMATION

PART NUMBER

0 to 0.1

PACKAGE

+0.1

–0

0.2

KA4xxx

SC-75 (USM)

0.6

0.05

0.5

0.75

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

1.0

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

VCBO

V^CEO

V^EBO

I^C

1.6 ± 0.1

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

Note1

0.1

Collector Current (pulse) ^Note2IC(pulse)

0.2

2: Base

Total Power Dissipation ^Note3

Junction Temperature

Storage Temperature

T^j

0.2

°C

3: Collector

150

T^stg

–55 to +150

Note 1.

PART NUMBER

VEBO

MARK

R¹

R²

PART NUMBER

VEBO

MARK

R¹

R²

(V)

(kΩ)

10.0

22.0

47.0

4.7

(kΩ)

(V)

(kΩ)

KA4A4M

KA4F4M

KA4L4M

KA4L3M

KA4L3N

KA4L3Z

KA4A3Q

KA4A4P

KA4F4N

10.0

22.0

47.0

4.7

KA4L4L

KA4A4Z

KA4F4Z

KA4L4Z

KA4F3M

KA4F3P

KA4F3R

KA4A4L

KA4L4K

47.0

10.0

22.0

47.0

2.2

22.0

4.7

10.0

2.2

10.0

47.0

4.7

2.2

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

10.0

Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%

Note 3. Mounted on ceramic substrate of 3.0 cm²x 0.64 mm

<R>

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16495EJ5V0DS00 (5th edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...22

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KA4A3Q-T1-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A3Q-T2-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A3Q-T2-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
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KA4A4L	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4L-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4L-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
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KA4A4L-T1	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4L-T1-A	RENESAS	获取价格	KA4A4L-T1-A