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K9F5616U0B-HCB0

更新时间： 2024-11-25 22:09:11
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
34页 602K
描述
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

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K9F5616U0B-HCB0 数据手册

 浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第2页浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第3页浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第4页浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第5页浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第6页浏览型号K9F5616U0B-HCB0的Datasheet PDF文件第7页 
K9F5608U0B-VCB0,VIB0,FCB0,FIB0  
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5608U0B-YCB0,YIB0,PCB0,PIB0  
K9F5608U0B-DCB0,DIB0,HCB0,HIB0  
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5616U0B-YCB0,YIB0,PCB0,PIB0  
K9F5616U0B-DCB0,DIB0,HCB0,HIB0  
FLASH MEMORY  
Document Title  
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
May. 15th 2001  
Advance  
0.1  
At Read2 operation in X16 device  
Sep. 20th 2001  
: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"  
0.2  
1. IOL(R/B) of 1.8V device is changed.  
Nov. 5th 2001  
-min. Value: 7mA -->3mA  
-typ. Value: 8mA -->4mA  
2. AC parameter is changed.  
tRP(min.) : 30ns --> 25ns  
3. WP pin provides hardware protection and is recommended to be kept  
at VIL during power-up and power-down and recovery time of minimum  
1ms is required before internal circuit gets ready for any command  
sequences as shown in Figure 15.  
---> WP pin provides hardware protection and is recommended to be  
kept at VIL during power-up and power-down and recovery time of  
minimum 10ms is required before internal circuit gets ready for any  
command sequences as shown in Figure 15.  
0.3  
0.4  
1. X16 TSOP1 pin is changed.  
: #36 pin is changed from VccQ to N.C .  
Feb. 15th 2002  
Apr. 15th 2002  
1. In X16 device, bad block information location is changed from 256th  
byte to 256th and 261th byte.  
2. tAR1, tAR2 are merged to tAR.(page 12)  
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns  
(after revision) min. tAR = 10ns  
3. min. tCLR is changed from 50ns to 10ns.(page12)  
4. min. tREA is changed from 35ns to 30ns.(page12)  
5. min. tWC is changed from 50ns to 45ns.(page12)  
6. Unique ID for Copyright Protection is available  
-The device includes one block sized OTP(One Time Programmable),  
which can be used to increase system security or to provide  
identification capabilities. Detailed information can be obtained by  
contact with Samsung.  
7. tRHZ is divide into tRHZ and tOH.(page 12)  
- tRHZ : RE High to Output Hi-Z  
- tOH : RE High to Output Hold  
8. tCHZ is divide into tCHZ and tOH.(page 12)  
- tCHZ : CE High to Output Hi-Z  
- tOH : CE High to Output Hold  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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与K9F5616U0B-HCB0相关器件

型号 品牌 获取价格 描述 数据表
K9F5616U0B-HCB00 SAMSUNG

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 		Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5616U0B-HIB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-HIB00 SAMSUNG

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 		Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5616U0B-PCB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-PIB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-YCB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-YIB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-YIB00 SAMSUNG

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 		Flash, 16MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F5616U0C SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-D SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata

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