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K9F5616U0C-HIB0 PDF预览

K9F5616U0C-HIB0

更新时间: 2024-09-27 22:28:31
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路
页数 文件大小 规格书
39页 654K
描述
512Mb/256Mb 1.8V NAND Flash Errata

K9F5616U0C-HIB0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA63,10X12,32Reach Compliance Code:compliant
风险等级:5.84最长访问时间:30 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PBGA-B63内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:2K端子数量:63
字数:16777216 words字数代码:16000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA63,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:256 words并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:8K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.025 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:NO
类型:NAND TYPEBase Number Matches:1

K9F5616U0C-HIB0 数据手册

 浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第2页浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第3页浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第4页浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第5页浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第6页浏览型号K9F5616U0C-HIB0的Datasheet PDF文件第7页 
San 16 Banwol-Ri  
Taean-Eup Hwasung- City  
Kyungki Do, Korea  
Tel.) 82 - 31 - 208 - 6463  
Fax.) 82 - 31 -208 - 6799  
ELECTRONICS  
March. 2003  
512Mb/256Mb 1.8V NAND Flash Errata  
Description : Some of AC characteristics are not meeting the specification.  
> AC characteristics : Refer to Table  
Affected Products : K9F1208Q0A-XXB0, K9F1216Q0A-XXB0  
K9F5608Q0C-XXB0, K9F5616Q0C-XXB0  
K9K1208Q0C-XXB0, K9K1216Q0C-XXB0  
Improvement schedule : The components without this restriction will  
be available from work week 23 or after.  
Workaround : Relax the relevant timing parameters according to the table.  
Table  
UNIT : ns  
Parameters  
Specification  
tWC  
45  
tWH  
15  
tWP  
25  
tRC  
50  
tREH  
15  
tRP  
25  
tREA tCEA  
30  
60  
45  
75  
Relaxed Condition  
80  
20  
60  
80  
20  
60  
Sincerely,  
chwoosun@sec.samsung.com  
Product Planning & Application Eng.  
Memory Division  
Samsung Electronics Co.  
1

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