Datasheet > K9F5616Q0B-DIB00

K9F5616Q0B-DIB00

更新时间： 2024-11-26 19:41:55

品牌	Logo	应用领域
三星 - SAMSUNG		内存集成电路
页数	文件大小	规格书
34页	605K
描述
Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63

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K9F5616Q0B-DIB00 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63	针数：	63
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.84
最长访问时间：	30 ns	其他特性：	CONTAINS ADDITIONAL 8M BIT NAND FLASH
JESD-30 代码：	R-PBGA-B63	长度：	11 mm
内存密度：	268435456 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
端子数量：	63	字数：	16777216 words
字数代码：	16000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	16MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
编程电压：	1.8 V	认证状态：	Not Qualified
座面最大高度：	1 mm	最大供电电压 (Vsup)：	1.95 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
类型：	NAND TYPE	宽度：	9 mm
Base Number Matches：	1

K9F5616Q0B-DIB00 数据手册

K9F5608Q0B K9F5616Q0B

K9F5608U0B K9F5616U0B

FLASH MEMORY

Document Title

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial issue.

May. 15th 2001

Advance

0.1

At Read2 operation in X16 device

Sep. 20th 2001

: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"

0.2

1. IOL(R/B) of 1.8V device is changed.

Nov. 5th 2001

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

2. AC parameter is changed.

tRP(min.) : 30ns --> 25ns

3. WP pin provides hardware protection and is recommended to be kept

at VIL during power-up and power-down and recovery time of minimum

1ms is required before internal circuit gets ready for any command

sequences as shown in Figure 15.

---> WP pin provides hardware protection and is recommended to be

kept at VIL during power-up and power-down and recovery time of

minimum 10ms is required before internal circuit gets ready for any

command sequences as shown in Figure 15.

0.3

0.4

1. X16 TSOP1 pin is changed.

: #36 pin is changed from VccQ to N.C .

Feb. 15th 2002

Apr. 15th 2002

1. In X16 device, bad block information location is changed from 256th

byte to 256th and 261th byte.

2. tAR1, tAR2 are merged to tAR.(page 12)

(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns

(after revision) min. tAR = 10ns

3. min. tCLR is changed from 50ns to 10ns.(page12)

4. min. tREA is changed from 35ns to 30ns.(page12)

5. min. tWC is changed from 50ns to 45ns.(page12)

6. Unique ID for Copyright Protection is available

-The device includes one block sized OTP(One Time Programmable),

which can be used to increase system security or to provide

identification capabilities. Detailed information can be obtained by

contact with Samsung.

7. tRHZ is divide into tRHZ and tOH.(page 12)

- tRHZ : RE High to Output Hi-Z

- tOH : RE High to Output Hold

8. tCHZ is divide into tCHZ and tOH.(page 12)

- tCHZ : CE High to Output Hi-Z

- tOH : CE High to Output Hold

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...34

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与K9F5616Q0B-DIB00相关器件

型号	品牌	获取价格	描述	数据表
K9F5616Q0B-HCB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HCB00	SAMSUNG	获取价格	Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5616Q0B-HIB0	SAMSUNG	获取价格	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-D	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-DCB0	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-DCB00	SAMSUNG	获取价格	Flash, 16MX16, 40ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5616Q0C-DIB0	SAMSUNG	获取价格	512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-GCB0T	SAMSUNG	获取价格	Flash, 16MX16, 40ns, PBGA63
K9F5616Q0C-GIB0	SAMSUNG	获取价格	Flash, 16MX16, 40ns, PBGA63

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