是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, |
针数: | 63 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.84 | 最长访问时间: | 30 ns |
其他特性: | CONTAINS ADDITIONAL 256M BIT SPARE MEMORY | JESD-30 代码: | R-PBGA-B63 |
长度: | 11 mm | 内存密度: | 268435456 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 63 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 2.9 V | 最小供电电压 (Vsup): | 2.4 V |
标称供电电压 (Vsup): | 2.65 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K9F5616D0C-JCB0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PBGA63, | |
K9F5616D0C-JCB00 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
K9F5616D0C-JCB0T | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PBGA63, | |
K9F5616D0C-JIB00 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
K9F5616D0C-JIB0T | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PBGA63, | |
K9F5616D0C-P | SAMSUNG |
获取价格 |
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory | |
K9F5616D0C-PCB0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PDSO48 | |
K9F5616D0C-PCB0T | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PDSO48 | |
K9F5616D0C-PIB0 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PDSO48 | |
K9F5616D0C-PIB00 | SAMSUNG |
获取价格 |
Flash, 16MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 |