Datasheet > K7I163682B

K7I163682B

更新时间： 2024-11-19 22:05:03

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器双倍数据速率
页数	文件大小	规格书
17页	379K
描述
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

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K7I163682B 数据手册

K7I163682B

K7I161882B

512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Document Title

512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

1. Initial document.

Advance

Premilinary

Oct. 23. 2002

Oct. 24. 2002

0.1

1. Add the speed bin (-33, -30)

2. Delete the speed bin (-25, -13)

0.2

1. Change the Boundary scan exit order.

2. Correct the Overshoot and Undershoot timing diagram.

Premilinary

Dec. 16, 2002

0.3

0.4

1. Add the speed bin (-25)

Premilinary

Jan. 27, 2003

Mar. 20, 2003

1. Correct the JTAG ID register definition

2. Correct the AC timing parameter (delete the tKHKH Max value)

0.5

0.6

1. Change the Maximum Clock cycle time.

2. Correct the 165FBGA package ball size.

Premilinary

April. 4, 2003

1. Add the power up/down sequencing comment.

2. Update the DC current parameter (Icc and Isb).

3. Change the Max. speed bin from -33 to -30.

June. 20, 2003

0.7

1. Change the ISB1.

Premilinary

Oct. 20. 2003

Speed Bin

From

-30

-25

-20

-16

200

180

160

140

230

210

190

170

1.0

2.0

1. Final spec release

1. Delete the x8 Org.

Final

Oct. 31, 2003

Nov. 28, 2003

2. Delete the 300MHz speed bin

3.0

3.1

1. Add the 300MHz speed bin

Final

June. 18, 2004

July. 28, 2004

1. Change the stand-by current(ISB1)

before

230

after

260

240

220

200

Isb1

-30 :

-25 :

-20 :

-16 :

210

190

170

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

July. 2004

Rev 3.1

- 1 -

12 3 4 5 6 7...17

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与K7I163682B相关器件

型号	品牌	获取价格	描述	数据表
K7I163682B_06	SAMSUNG	获取价格	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7I163682B-EC160	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163682B-EC16T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-EC200	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163682B-EC20T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-EC25T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-EC30T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-EI160	SAMSUNG	获取价格	DDR SRAM, 512KX36, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I163682B-EI16T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
K7I163682B-EI20T	SAMSUNG	获取价格	Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165