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K7B403625M-TC80 PDF预览

K7B403625M-TC80

更新时间: 2024-11-07 19:35:55
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
16页 438K
描述
Cache SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B403625M-TC80 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Base Number Matches:1

K7B403625M-TC80 数据手册

 浏览型号K7B403625M-TC80的Datasheet PDF文件第2页浏览型号K7B403625M-TC80的Datasheet PDF文件第3页浏览型号K7B403625M-TC80的Datasheet PDF文件第4页浏览型号K7B403625M-TC80的Datasheet PDF文件第5页浏览型号K7B403625M-TC80的Datasheet PDF文件第6页浏览型号K7B403625M-TC80的Datasheet PDF文件第7页 
K7B403625M  
128Kx36 Synchronous SRAM  
Document Title  
128Kx36-Bit Synchronous Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
Initial draft  
May. 15. 1997  
Feb. 11. 1998  
Preliminary  
Preliminary  
Modify power down cycle timing & Interleaved read timing,  
Insert Note 4 at AC timing characteristics.  
Change ISB1 value from 10mA to 30mA.  
Change ISB2 value from 10mA to 20mA.  
0.2  
0.3  
Change Undershoot spec  
April. 14. 1998  
May. 13. 1998  
Preliminary  
Preliminary  
from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)  
Add Overshoot spec 4.6V((pulse width£tCYC/2)  
Change VIH max from 5.5V to VDD+0.5V  
Change ISB2 value from 20mA to 30mA.  
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.  
1.0  
2.0  
Final spec Release  
May. 15. 1998  
Dec. 02. 1998  
Final  
Final  
Add VDDQ Supply voltage( 2.5V )  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1998  
Rev 2.0  

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